A resistance change memory device including: a substrate; cell arrays stacked thereabove, each including a matrix layout of memory cells; a write circuit configured to write a pair cell constituted by two neighboring memory cells; and a read circuit configured to read complementary resistance value states of the pair cell as one bit of data, wherein the memory cell includes a variable resistance element for storing as information a resistance value, and wherein the variable resistance element has a recording layer formed of a first composite compound expressed by A.sub.xM.sub.yO.sub.z (where "A" and "M" are cation elements different from each other; "O" oxygen; and 0.5.ltoreq.x.ltoreq.1.5, 0.5.ltoreq.y.ltoreq.2.5 and 1.5.ltoreq.z.ltoreq.4.5) and a second composite compound containing at least one transition element and a cavity site for housing a cation ion.