Methods in accordance with this invention form a microelectronic structure by forming a carbon nano-tube ("CNT") layer, and forming a boron nitride layer ("BN liner") above the CNT layer, wherein the BN liner comprises: (1) a first portion disposed above and in contact with the CNT layer; and/or (2) a second portion disposed in and/or around one or more carbon nano-tubes in the CNT layer. Numerous other aspects are provided.

 
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> ELECTRONIC DEVICES INCLUDING CARBON NANO-TUBE FILMS HAVING CARBON-BASED LINERS, AND METHODS OF FORMING THE SAME

> Method of making a diode read/write memory cell in a programmed state

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