Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. An electrically insulating oxide layer separates the ion conductor solid electrolyte material from the electrochemically active electrode.

 
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< METHOD FOR PRODUCING LOW COST MEDIA

< NONVOLATILE RESISTIVE MEMORY DEVICES

> FERROELECTRIC MEMORY WITH MAGNETOELECTRIC ELEMENT

> ST-RAM EMPLOYING A SPIN FILTER

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