In one embodiment, a mandrel and an outer dummy spacer may be employed to
form a first conductivity type region. The mandrel is removed to form a
recessed region wherein a second conductivity type region is formed. In
another embodiment, a mandrel is removed from within shallow trench
isolation to form a recessed region, in which an inner dummy spacer is
formed. A first conductivity type region and a second conductivity region
are formed within the remainder of the recessed region. An anneal is
performed so that the first conductivity type region and the second
conductivity type region abut each other by diffusion. A gate electrode
is formed in self-alignment to the p-n junction between the first and
second conductivity regions. The p-n junction controlled by the gate
electrode, which may be sublithographic, constitutes an inventive
tunneling effect transistor.