To provide a nonvolatile memory including a word-line drive circuit that supplies a selective voltage to a selective transistor connected in series to a nonvolatile memory device. The word-line drive circuit applies a first selective voltage VDD to a control electrode of the selective transistor in a first period, and applies a second selective voltage VPP higher than the first selective voltage VDD to the control electrode of the selective transistor in a second period that follows the first period. Thereby, a current drive capability of the selective transistor is gradually changed. Thus, it becomes possible to limit the current drive capability of the selective transistor at timing at which snap-back is caused. As a result, an excessive current caused by the snap-back is suppressed, thereby reducing damage inflicted on the nonvolatile memory device.