A memory unit includes a magnetic tunnel junction data cell is
electrically coupled to a bit line and a source line. The magnetic tunnel
junction data cell is configured to switch between a high resistance
state and a low resistance state by passing a write current through the
magnetic tunnel junction data cell. A first diode is electrically between
the magnetic tunnel junction data cell and the source line and a second
diode is electrically between the magnetic tunnel junction data cell and
the source line. The first diode and second diode are in parallel
electrical connection, and having opposing forward bias directions.