Methods for fabricating flash memory devices are provided. In accordance with an exemplary embodiment of the invention, a method for fabricating a memory device comprises forming a first gate stack and a second gate stack overlying a substrate. A trench is etched into the substrate between the first gate stack and the second gate stack. A first impurity doped region is formed within the substrate underlying the trench.

 
Web www.patentalert.com

< CMOS transistors with differential oxygen content high-k dielectrics

> Technique for providing stress sources in transistors in close proximity to a channel region by recessing drain and source regions

> Method of forming a silicon layer and method of manufacturing a display substrate by using the same
~ 00597