A semiconductor element, a semiconductor sensor, and a semiconductor memory element are provided, in which an MFMIS structure having a lower electrode and an integrated circuit can be integrated. An epitaxially grown .gamma.-Al.sub.2O.sub.3 single crystal film (2) is disposed on a semiconductor single crystal substrate (1), and an epitaxial single crystal Pt thin film (3) is disposed on the .gamma.-Al.sub.2O.sub.3 single crystal film (2).

 
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> Package substrate with built-in capacitor and manufacturing method thereof

> Phase shifter with photonic band gap structure using ferroelectric thin film
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