.[.The present invention relates to a method of fabricating a
semiconductor device which reduces.]. .Iadd.The .Iaddend.leakage current
.[.by controlling an etch of a field oxide layer when a contact hole is
formed. The present invention includes the steps of forming a.]. .Iadd.in
a semiconductor device is reduced. A .Iaddend.field oxide layer
.[.defining an active area and a field area.]. .Iadd.is formed
.Iaddend.on a semiconductor substrate.[.of a first conductive type,
forming a.]. .Iadd.. A .Iaddend.gate .Iadd.is formed .Iaddend.on
.[.the.]. .Iadd.an .Iaddend.active area of the .[.semiconductor.].
substrate. .[.by inserting a gate insulating layer between the
semiconductor.]. substrate and the gate, forming impurity regions .[.of
a second conductive type in the semiconductor.]. .Iadd.are formed on the
.Iaddend.substrate .[.in use of.]. .Iadd.using .Iaddend.the gate as a
mask.[., forming a.]. .Iadd.. A .Iaddend.first insulating
.[.interlayer.]. .Iadd.layer is formed .Iaddend.on the
.[.semiconductor.]. substrate by depositing an insulator .[.of which.].
.Iadd.having the .Iaddend.heat expansion coefficient and lattice mismatch
.Iadd.that are .Iaddend.less than those of the .[.semiconductor.].
substrate.[.to cover the field oxide layer and the gate, forming a.].
.Iadd.. A .Iaddend.second insulating .[.interlayer.]. .Iadd.layer is
formed .Iaddend.on the first insulating .[.interlayer.]. .Iadd.layer
.Iaddend.by depositing another insulator .[.of which.]. .Iadd.having an
.Iaddend.etch rate .Iadd.that .Iaddend.is different from that of the
first insulating .[.interlayer, forming a.]. .Iadd.layer. A
.Iaddend.third insulating .[.interlayer.]. .Iadd.layer is formed
.Iaddend.on the second insulating .[.interlayer.]. .Iadd.layer
.Iaddend.by depositing .Iadd.yet .Iaddend.another insulator .[.of
which.]. .Iadd.having an .Iaddend.etch rate .Iadd.that .Iaddend.is
different from that of the second insulating .[.interlayer, and forming a
first contact hole.]. .Iadd.layer. First .Iaddend.and second contact
holes .[.exposing the gate and heavily doped regions respectively.].
.Iadd.are formed .Iaddend.by patterning the third to first insulating
.[.interlayer successively by photolithography.]. .Iadd.layers.Iaddend..
