There is provided an underlayer coating forming composition for
lithography for forming an underlayer coating having a high dry etching
rate compared with photoresist, causing no intermixing with the
photoresist, and excellent in property of filling hole on the
semiconductor substrate, which is used in lithography process of
manufacture of semiconductor device. The composition comprises a
cyclodextrin compound that 10% to 90% of total number of hydroxy groups
in cyclodextrin is converted into an ether or ester group, a crosslinking
compound, a crosslinking catalyst and a solvent.