A hafnium silicide target is provided. The target is used for forming a gate oxide film composed of HfSi.sub.1.02-2.00. The target material is superior in workability and embrittlement resistance and is suitable for forming a HfSiO film and HfSiON film that may be used as a high dielectric gate insulation film in substitute for a SiO.sub.2 film. A method of manufacturing the above referenced hafnium silicide target is also provided.

 
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