A hafnium silicide target is provided. The target is used for forming a
gate oxide film composed of HfSi.sub.1.02-2.00. The target material is
superior in workability and embrittlement resistance and is suitable for
forming a HfSiO film and HfSiON film that may be used as a high
dielectric gate insulation film in substitute for a SiO.sub.2 film. A
method of manufacturing the above referenced hafnium silicide target is
also provided.