A method for metallizing a through silicon via feature in a semiconductor integrated circuit device substrate comprising immersing the semiconductor integrated circuit device substrate into an electrolytic copper deposition composition comprising a source of copper ions, an organic sulfonic acid or inorganic acid, or one or more organic compounds selected from among polarizers and/or depolarizers, and chloride ions.

 
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< Modified pyrimidine glucocorticoid receptor modulators

> Carboxylic acid compounds

> Heterocycle grafted monomers and related polymers and hybrid inorganic-organic polymer membranes

~ 00584