The laser beam projection mask 14 has three rectangular-shaped slits 25, 26, 27 as transmission areas. These three slits 25, 26, 27 are formed in sequence in X direction shown by an arrow X in FIG. 2C at specified intervals, and the width in the X direction decreases in the order of the slit 25, the slit 26 and the slit 27. More particularly, transmission coefficients of the transmission areas change in conformity with a temperature distribution curve V1 of a silicon film 4 shown in FIG. 2B.

 
Web www.patentalert.com

< Hybrid oriented substrates and crystal imprinting methods for forming such hybrid oriented substrates

> Method of blocking a void during contact formation

> Method for forming strained silicon nitride films and a device containing such films
~ 00583