A current-perpendicular-to-plane magneto-resistive element includes a magneto-resistive film and a pair of upper and lower magnetic shielding films holding the magneto-resistive film therebetween for current feeding. The lower magnetic shielding film has an at least two-layer structure including a crystalline material layer and an amorphous material layer disposed below the crystalline material layer.

 
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> Magnetoresistive sensor having an enhanced lead overlay design and shape enhanced pinning

> Magnetoresistive sensor having an anisotropic hard bias without a buffer layer

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