The invention relates to a micro-device with a cavity (50), the micro-device comprising a substrate (10, 110), the method comprising steps of: A) providing the substrate (10, 110), having a surface and comprising a sacrificial oxide region (20, 107, 115) at the surface ( ); B) covering the sacrificial oxide region (20, 107, 115) with a porous layer (40, 114, 124) being permeable to a vapor HF etchant (100), and C) selectively etching the sacrificial oxide region (20, 107, 115) through the porous layer (40, 114, 124) using the vapor HF etchant (100) to obtain the cavity (50). This method may be used in the manufacture of various micro-devices with a cavity (50), i.e. MEMS devices, and in particular in the encapsulation part thereof, and semiconductor devices, and in particular the BEOL-part thereof.