A nanostructure comprising germanium, including wires of less than 1 micron in diameter and walls of less than 1 micron in width, in contact with the substrate and extending outward from the substrate is provided along with a method of preparation.

 
Web www.patentalert.com

< Method for destruction of metallic carbon nanotubes, method for production of aggregate of semiconducting carbon nanotubes, method for production of thin film of semiconducting carbon nanotubes, method for destruction of semiconducting carbon nanotubes, method for production of aggregate of metallic carbon nanotubes, method for production of thin film of metallic carbon nanotubes, method for production of electronic device, method for production of aggregate of carbon nanotubes, method for selective reaction of semiconducting carbon nanotubes

> Nano-crystal etch process

> Method of depositing nanolaminate film for non-volatile floating gate memory devices by atomic layer deposition

~ 00576