A method of manufacturing a semiconductor device includes the steps of: forming recesses (a via hole and wiring grooves) in a insulation film; forming a seal layer on inside surfaces of the recesses by using a gas based on a silane having an alkyl group as a precursor; applying EB-cure or UV-cure to the seal layer; and filling up the recesses with a conductor.

 
Web www.patentalert.com

< Semiconductor laser device

> Wiring substrate, semiconductor device, and method of manufacturing the same

> Radiation hardened lateral MOSFET structure

~ 00574