A method for forming a misalignment inspection mark is disclosed. The
formation method includes forming a reference layer device pattern and a
first mark in a reference layer and forming an overlying layer device
pattern and a second mark in a layer over the reference layer, the
overlying layer device pattern corresponding to the reference layer. The
second mark is formed by forming a second mark area adjacent to the first
mark, the second mark area including an arrangement of a plurality of
patterns having a line width, a pitch, and a pattern density at least one
of which is equivalent to that of the overlying layer device pattern, and
removing those of the plurality of patterns which are arranged at
boundaries of the second mark area.