Methods of forming a microelectronic structure are described. Embodiments of those methods include removing a portion of at least one of Si--C bonds and CHx bonds in a dielectric material comprising a porogen material by reaction with a wet chemical, wherein the portion of Si--C and CHx bonds are converted to Si--H bonds. The Si--H bonds may be further hydrolyzed to form SiOH linkages. The SiOH linkages may then be removed by a radiation based cure, wherein a portion of the porogen material is also removed.