A display device includes a substrate having a display region and a driver region; a gate line and a data line crossing each other to define a pixel region in the display region, the pixel region having a pixel electrode; an insulation layer between the gate line and the data line; a first thin film transistor in the display region; and a second thin film transistor having a first polarity and a third thin film transistor having a second polarity in the driver region, wherein the pixel electrode, the gate line and the gate electrodes of the first to third thin film transistors have a double-layer structure in which a metal layer is formed on a transparent conductive layer, and the transparent conductive layer of the pixel electrode is exposed through a transmission hole passing through the insulation layer and the metal layer in the pixel region.

 
Web www.patentalert.com

< Insulated-gate field effect transistor

> Method of forming stepped recesses for embedded strain elements in a semiconductor device

> Method for manufacturing flat substrates

~ 00571