One aspect of the invention relates to a method for accessing a memory device. One embodiment relates to a method for accessing a memory device. In the method during a read operation, one data value is provided on a local IO line while complimentary local IO line that is associated with the local IO line is inactivated. During a write operation, another data value is provided on the local IO line and a complimentary data value is provided on the complimentary local IO line. Other systems and methods are also disclosed.

 
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> Memory device with external magnetic field generator and method of operating and manufacturing the same
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