At least one recessed region having two parallel edges is formed in an insulator layer over a semiconductor layer such that the lengthwise direction of the recessed region coincides with optimal carrier mobility surfaces of the semiconductor material in the semiconductor layer for finFETs to be formed. Self-assembling block copolymers are applied within the at least one recessed region and annealed to form a set of parallel polymer block lines having a sublithographic width and containing a first polymeric block component. The pattern of sublithographic width lines is transferred into the semiconductor layer employing the set of parallel polymer block lines as an etch mask. Sublithographic width semiconductor fins thus formed may have sidewalls for optimal carrier mobility for p-type finFETs and n-type finFETs.

 
Web www.patentalert.com

< Laser etched fiducials in roll-roll display

> Water-based process for the preparation of polymer-clay nanocomposites

> Methods and apparatus for removal of degradation byproducts and contaminants from oil for use in preparation of biodiesel

~ 00564