A semiconductor process and apparatus provide a T-shaped structure (96) formed from a polysilicon structure (10) and an epitaxially grown polysilicon layer (70) and having a narrower bottom critical dimension (e.g., at or below 40 nm) and a larger top critical dimension (e.g., at or above 40 nm) so that a silicide may be formed from a first material (such as CoSi.sub.2) in at least the upper region (90) of the T-shaped structure (96) without incurring the increased resistance caused by agglomeration and voiding that can occur with certain silicides at the smaller critical dimensions.