Nonvolatile memory cells and array are provided. The memory cell comprises a body, a source, a drain, and a charge storage region. The body comprises an n-type conductivity and is formed in a well of the n-type conductivity. The source and the drain have p-type conductivity and are formed in the well with a channel of the body defined therebetween. The charge storage region is disposed over and insulated from the channel by a channel insulator. Each cell further comprises a bias setting having a source voltage applied to the source, a well voltage applied to the well, and a drain voltage applied to the drain. A bias configuration for an erase operation of the memory cell is further provided, wherein the source voltage is sufficiently more negative with respect to the well voltage and is sufficiently more positive with respect to the drain voltage to inject hot holes onto the charge storage region. The cells can be arranged in row and column to form memory arrays and memory device.