Methods for processing substrate to deposit barrier layers of one or more material layers by atomic layer deposition are provided. In one aspect, a method is provided for processing a substrate including depositing a metal nitride barrier layer on at least a portion of a substrate surface by alternately introducing one or more pulses of a metal containing compound and one or more pulses of a nitrogen containing compound and depositing a metal barrier layer on at least a portion of the metal nitride barrier layer by alternately introducing one or more pulses of a metal containing compound and one or more pulses of a reductant. A soak process may be performed on the substrate surface before deposition of the metal nitride barrier layer and/or metal barrier layer.

 
Web www.patentalert.com

< Process of forming an electronic device including a barrier layer

> Semiconductor package having re-distribution lines for supplying power and a method for manufacturing the same

> Semiconductor device comprising a copper alloy as a barrier layer in a copper metallization layer

~ 00562