A memory device has a first electrode, a second electrode, and memory material defining an inter-electrode current path between the first electrode and the second electrode. A gap is formed by shrinkage of the shrinkable material between the memory material and a shrinkable material next to the memory material.

 
Web www.patentalert.com

< Plasma treatment of a semiconductor surface for enhanced nucleation of a metal-containing layer

> Soft mold, method of manufacturing the same, and patterning method using the same

> Semiconductor device and method of manufacturing the same

~ 00560