Embodiments of the invention generally provide a method for forming a doped silicon-containing material on a substrate. In one embodiment, the method provides depositing a polycrystalline layer on a dielectric layer and implanting the polycrystalline layer with a dopant to form a doped polycrystalline layer having a dopant concentration within a range from about 1.times.10.sup.19 atoms/cm.sup.3 to about 1.times.10.sup.21 atoms/cm.sup.3, wherein the doped polycrystalline layer contains silicon or may contain germanium, carbon, or boron. The substrate may be heated to a temperature of about 800.degree. C. or higher, such as about 1,000.degree. C., during the rapid thermal anneal. Subsequently, the doped polycrystalline layer may be exposed to a laser anneal and heated to a temperature of about 1,000.degree. C. or greater, such within a range from about 1,050.degree. C. to about 1,400.degree. C., for about 500 milliseconds or less, such as about 100 milliseconds or less.