In one aspect, a charge trap flash memory device is provided which includes a semiconductor substrate, source and drain regions which are spaced apart in an active region of the semiconductor substrate to define a channel region therebetween, a tunneling dielectric layer located on the channel region, an organic polymer thin film located on the tunneling dielectric layer, metal or metal oxide nano-crystals embedded in the organic polymer thin film, and a gate located on the organic polymer thin film.

 
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> Electromigration-resistant and compliant wire interconnects, nano-sized solder compositions, systems made thereof, and methods of assembling soldered packages

> Spin microscope based on optically detected magnetic resonance

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