Techniques for controllably directing beamlets to a target substrate are
disclosed. The beamlets may be either positive ions or electrons. It has
been shown that beamlets may be produced with a diameter of 1 .mu.m, with
inter-aperture spacings of 12 .mu.m. An array of such beamlets, may be
used for maskless lithography. By step-wise movement of the beamlets
relative to the target substrate, individual devices may be directly
e-beam written. Ion beams may be directly written as well. Due to the
high brightness of the beamlets from extraction from a multicusp source,
exposure times for lithographic exposure are thought to be minimized.
Alternatively, the beamlets may be electrons striking a high Z material
for X-ray production, thereafter collimated to provide patterned X-ray
exposures such as those used in CAT scans. Such a device may be used for
remote detection of explosives.