A ferroelectric film includes a plurality of ferroelectric nanodomains configured in a regularly staggered fashion. The ferroelectric film has a quasi 2-dimensional configuration and is comprised of a ferroelectric material. A method for forming a ferroelectric film is also provided. A ferroelectric film comprised of a ferroelectric material is prepared. The ferroelectric film has a quasi 2-dimensional configuration and defines a direction that is normal to the quasi 2-dimensional configuration. An electric field along the normal direction is applied to the ferroelectric film, thereby the ferroelectric film having an array of ferroelectric nanodomains configured in a regularly staggered fashion is obtained.