A layer structure and process for providing sublithographic structures are
provided. A first auxiliary layer is formed over a surface of a carrier
layer. A lithographically patterned second auxiliary layer structure is
formed on a surface of the first auxiliary layer. The first auxiliary
layer is anisotropically etched using the patterned second auxiliary
layer structure as mask to form an anisotropically patterned first
auxiliary layer structure. The anisotropically patterned first auxiliary
layer structure is isotropically etched back using the patterned second
auxiliary layer structure to remove subsections below the second
auxiliary layer structure and to form an isotropically patterned first
auxiliary layer structure. A mask layer is formed over the carrier layer
including the subsections beneath the second auxiliary layer structure
and is anisotropically etched down to the carrier layer to form the
sublithographic structures. The first and second auxiliary layer
structures are removed to uncover the sublithographic structures.