A metal-insulator-metal (MIM) capacitor that includes a silicon nitride
(SiN) dielectric film is disclosed. The MIM capacitor includes a bottom
electrode, a top electrode and a dielectric layer positioned between the
bottom electrode and the top electrode. The dielectric layer includes a
silicon nitride film that has a plurality of silicon-hydrogen bonds and a
plurality of nitride-hydrogen bonds. A ratio of silicon-hydrogen bonds to
nitride-hydrogen bonds is equal to or smaller than 0.5. Accordingly, the
nitrogen-rich and compressive silicon nitride film can improve the
breakdown voltage of the MIM capacitor.