Means and methods are provided for trench TMOS devices (41-10, 11, 12), comprising, providing a first semiconductor (53, 53') of a first composition having an upper surface (541), with a body portion (54) proximate the upper surface (541), a drift portion (46, 83) spaced apart from the upper surface (541) and a trench (49, 49') having sidewalls (493) extending from the upper surface (541) into the drift portion (46, 83). A second semiconductor (56) adapted to provide a higher mobility layer is applied on the trench sidewalls (493) where parts (78) of the body portion (54) are exposed. A dielectric (70) covers the higher mobility layer (56) and separates it from a control gate (72) in the trench (49, 49'). Source regions (68) formed in the body portion (54) proximate the upper surface (491) communicate with the higher mobility layer (56). When biased, source-drain current (87, 87') flows from the source regions (68) through gate induced channels (78) in the higher mobility layer (56) and into the drift portion (46, 83) where it is extracted by a drain (42) or other connection coupled to the drift portion (46, 83).