MEMORY CELL THAT EMPLOYS A SELECTIVELY FABRICATED CARBON NANO-TUBE REVERSIBLE RESISTANCE-SWITCHING ELEMENT FORMED OVER A BOTTOM CONDUCTOR AND METHODS OF FORMING THE SAME

In some aspects, a method of fabricating a memory cell is provided that includes: (1) fabricating a first conductor above a substrate; (2) selectively fabricating a carbon nano-tube ("CNT") material above the first conductor by: (a) fabricating a CNT seeding layer on the first conductor, wherein the CNT seeding layer comprises silicon-germanium ("Si/Ge"), (b) planarizing a surface of the deposited CNT seeding layer, and (c) selectively fabricating CNT material on the CNT seeding layer; (3) fabricating a diode above the CNT material; and (4) fabricating a second conductor above the diode. Numerous other aspects are provided.

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> Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same

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