In accordance with aspects of the invention, a method of forming a memory
cell is provided, the method including forming a steering element above a
substrate, and forming a memory element coupled to the steering element,
wherein the memory element comprises a carbon-based material having a
thickness of not more than ten atomic layers. The memory element may be
formed by repeatedly performing the following steps: forming a layer of a
carbon-based material, the layer having a thickness of about one
monolayer, and subjecting the layer of carbon-based material to a thermal
anneal. Other aspects are also described.