Methods of manufacturing a semiconductor device and resulting products.
The semiconductor device includes a semiconductor substrate, a hetero
semiconductor region hetero-adjoined with the semiconductor substrate, a
gate insulation layer contacting the semiconductor substrate and a
heterojunction of the hetero semiconductor region, a gate electrode
formed on the gate insulation layer, an electric field alleviation region
spaced apart from a heterojunction driving end of the heterojunction that
contacts the gate insulation layer by a predetermined distance and
contacting the semiconductor substrate and the gate insulation layer, a
source electrode contacting the hetero semiconductor region and a drain
electrode contacting the semiconductor substrate. A mask layer is formed
on the hetero semiconductor region, and the electric field alleviation
region and the heterojunction driving end are formed by using at least a
portion of the first mask layer.