A non-volatile memory device includes a substrate, resistance patterns, a gate dielectric layer, a gate electrode pattern, a first impurity region and a second impurity region. The substrate has recesses. The recesses are filled with the resistance patterns. The resistance patterns include a material having a resistance that is variable in accordance with a voltage applied thereto. The gate dielectric layer is formed on the substrate. The gate electrode pattern is formed on the gate dielectric layer. The first and second impurity regions are formed in the substrate. The first impurity region and the second impurity region contact side surfaces of the resistance patterns. Further, the resistance patterns, the first impurity region and the second impurity region define a channel region. Thus, the non-volatile memory device may store data using a variable resistance of the resistance patterns so that the non-volatile memory device may have excellent operational characteristics.