A method for monitoring photolithography processing includes monitoring application of a light sensitive material to the surface of each of a plurality of substrates and detecting that a supply of the light sensitive material applied to the substrates has changed from a first batch of light sensitive material to a second batch light sensitive material. A change in photolithography process results caused by the change from the first batch to the second batch of light sensitive material is determined. Also included is initiating corrective action based on the change in photolithography process results.