Semiconductor storage device of reduced layout area having memory cell
rows accessed selectively. Memory cells, each including a programmable
resistive element, are connected by a bit line to form a memory cell row.
Selecting circuit for selecting a memory cell row includes a first NMOS
transistor having first end connected to write amplifier, second end
connected to the bit line, and a gate, and controlled such that, if the
write amplifier outputs a voltage level on power-supply side after the
block-select activating signal has been activated, a voltage of the same
polarity as that of the power-supply voltage and exceeding the voltage
level of the power supply is applied to the gate. A second NMOS
transistor has first end to which the block-select activating signal is
applied, a gate connected to the power supply, and second end connected
to the gate of the first NMOS transistor.