Improved circuitry and methods operate to protect the memory cells from potentially damaging electrical energy that can be imposed during programming of the memory cells. Additionally, the improved circuitry and methods operate to detect when programming of the memory cells has been achieved. The improved circuitry and methods are particularly useful for programming non-volatile memory cells. In one embodiment, the memory device pertains to a semiconductor memory product, such as a semiconductor memory chip or a portable memory card.

 
Web www.patentalert.com

< Biasing non-volatile storage to compensate for temperature variations

> Non-volatile storage with bias for temperature compensation

> Resistance sensing and compensation for non-volatile storage

~ 00544