A power semiconductor module has a ceramic substrate (9) which has on at least one side a patterned metallization (50) with a fineness of pattern of smaller than or equal to 800 .mu.m, a first semiconductor chip (10) which has a power semiconductor component and which is arranged on the patterned metallization (50), and a second semiconductor chip (30) which has drive electronics for driving the first semiconductor chip (10) and which is arranged on the patterned metallization (50). Furthermore, at least one thin-wire bond (2, 3) with a bonding-wire diameter (d2, d3) of smaller than or equal to 75 .mu.m is provided which is formed between the patterned metallization (50) and the second semiconductor chip (30).