Semiconductor devices and methods of fabricating the same are provided. A
gate insulating film is provided on a semiconductor substrate. A
polymetal gate electrode is provided on the gate insulating film. The
polymetal gate electrode includes a conductive polysilicon film on the
gate insulating film, a first metal silicide film on the conductive
polysilicon film, a barrier film on the first metal silicide film, and a
metal film on the barrier film. The barrier film includes a titanium
nitride (TiN) film on the first metal silicide film and a buffer layer
between the TiN film and the metal film.