A method of forming an aligned connection between a nanotube layer and an
etched feature is disclosed. An etched feature is formed having a top and
a side and optionally a notched feature at the top. A patterned nanotube
layer is formed such that the nanotube layer contacts portions of the
side and overlaps a portion of the top of the etched feature. The
nanotube layer is then covered with an insulating layer. Then a top
portion of the insulating layer is removed to expose a top portion of the
etched feature.