The invention relates to a method of producing a film intended for
applications in electronics, optics or optronics starting from an initial
wafer, which includes a step of implanting atomic species through one of
the faces of the wafer. This method includes forming a step of defined
height around the periphery of the wafer, with the step having a mean
thickness that is less than that of the wafer; and selectively implanting
atomic species through a face of the wafer but not through the step to
form an implanted zone at a defined implant depth with the film being
defined between the face of the wafer and the implanted zone. The
implantation of atomic species into the step can be prevented by forming
a protective layer at least over the step or by masking the step. The
invention also relates to a wafer obtainable by the method.