A non-volatile memory element includes a bottom electrode 12, a bit line 14 provided on the bottom electrode 12, and a recording layer 15 containing phase change material connected between the bottom electrode 12 and the bit line 14. In accordance with this invention, the bit line 14 is in contact with a growth initiation surface 15a of the recording layer 15. This structure can be obtained by forming the bit line 14 before the recording layer 15, resulting in a three-dimensional structure. This decreases the area of contact between the recording layer 15 and the bit line 14, decreasing heat dissipation to the bit line 14 without increasing the thickness of the recording layer 15. With this three-dimensional structure, moreover, there is no top electrode between the bit line 14 and the recording layer 15, keeping down the complexity of the fabrication process.

 
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