A reset method of a non-volatile memory is described. The non-volatile
memory includes a plurality of cells on a substrate of a first
conductivity type, each including a portion of the substrate, a control
gate, a charge-storing layer between the portion of the substrate and the
control gate, and two S/D regions of a second conductivity type in the
portion of the substrate. The reset method utilizes a DSB-BTBTHH effect.
A first voltage is applied to the substrate and a second voltage to both
S/D regions of each cell, wherein the difference between the first and
second voltages is sufficient to cause band-to-band tunneling hot holes.
A voltage applied to the control gate and the period of applying the
voltages are controlled such that the threshold voltages of all the cells
converge in a tolerable range.