A method of fabricating a semiconductor device includes a dry etching process of a silicon surface. The dry etching process is conducted by an etching gas containing at least one gas species selected from the group consisting of: HBr, HCl, Cl.sub.2, Br.sub.2 and HI, wherein the dry etching process includes a first step conducted at a first temperature; and a second step conducted at a second temperature.

 
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< Solid-state imaging device with reduced smear

> Control of photoelectrochemical (PEC) etching by modification of the local electrochemical potential of the semiconductor structure relative to the electrolyte

> Method for reducing resist poisoning during patterning of silicon nitride layers in a semiconductor device

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