Embodiments relate to a semiconductor device and a method of manufacturing a semiconductor device having a pre-metal dielectric liner. In embodiments, method for forming a semiconductor device may include forming a pre-metal dielectric liner, which has a multi-layer structure including a plurality of interfacial surfaces, on an entire surface of a semiconductor substrate formed with a transistor, and forming a boron phospho silicate glass (BPSG) oxide layer on the pre-metal dielectric liner. Since the pre-metal dielectric liner is formed in a multi-layer structure having a plurality of interfacial surfaces, boron (B) of an upper BPSG oxide layer is not penetrated into the semiconductor substrate.