A nonplanar semiconductor device having a semiconductor body formed on an insulating layer of a substrate. The semiconductor body has a top surface opposite a bottom surface formed on the insulating layer and a pair of laterally opposite sidewalls wherein the distance between the laterally opposite sidewalls at the top surface is greater than at the bottom surface. A gate dielectric layer is formed on the top surface of the semiconductor body and on the sidewalls of the semiconductor body. A gate electrode is formed on the gate dielectric layer on the top surface and sidewalls of the semiconductor body. A pair of source/drain regions are formed in the semiconductor body on opposite sides of the gate electrode.

 
Web www.patentalert.com

< Cytomodulating peptides for treating interstitial cystitis

> Tetrahydroquinolones and their use as modulators of metabotropic glutamate receptors

> Preparation of iron(II) acetate powder from a low grade magnetite

~ 00528