A semiconductor device having a metal thin-film resistance on an insulation film includes first and second contact holes formed in the insulation film, a first conductive plug formed in the first contact hole, a second conductive plug formed in the second contact hole simultaneously to formation of the first conductive plug, a metal thin-film resistance formed on the first conductive plug and on the insulation film, and a metal interconnection pattern formed on the second conductive plug and the insulation film.

 
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